PETS Inc. Ion Milling System.

Ion Milling System은 보통 드라이 에칭 시스템으로 제거할수 없는 (세라믹, 텅스텐, 탄탈륨, 동, 동-알미늄 합금등)필름을
제거하는데에 사용합니다.
이온 밀링은  충돌 각도를 조절해서 기판에 트렌치를 형성할 수 있습니다.

Key Benefits

컴퓨터 제어를 통해 작동시마다 항상 동일한 process parameter 를 보증합니다.

모든자동 런에 대해서 Data logging 합니다. .

무제한의 런 프로그램 저장(.rcp files

.챔버는 산화피막 알미늄이나 스텐레스 스틸중에서 선택할수 있습니다

수냉식 Kaufman Source Gun  및 챔버.

N2 purge(선택 사양).

+ - 5% uniformity 보증.

시스템은 connecting fitting이 달린 mechanical pump (14 cfm)가 기본포함됩니다

선택 사양: Cryo Pump, Oil Filtration and additional AFC's .




2"Gun & System


5" Gun & System


8" Gun & System


In simple terms ion beam milling can be viewed as an atomic sand blaster.

The grains of sand are actually submicron ion particles accelerated to bombard the surface of the work mounted on a rotating table inside a vacuum chamber. The work is typically a wafer, substrate or element that requires material removal by atomic sandblasting or dry etching.

A selectively applied protectant, photo sensitive resist, is applied to the work element prior to introduction into the ion miller. The resist protects the underlying material during the etching process which may be up to eight hours or longer, depending upon the amount to be removed and the etch rate of the materials. Everything that is exposed to the collimated ion beam (may be 15" in diameter in some equipment) etches during the process cycle, even the resist.

In most micromachining applications the desired material to be removed etches at a rate 3 to 10 times faster than the resist protectant thus preserving the material and features underneath the resist.

Features such as the Constitution and the Lord's Prayer on the head of a pin may be realized using photolithography (select application of photoresist) and ion beam milling.

Argon ions within a plasma formed by an electrical discharge are accelerated by a pair of optically aligned grids. The highly collimated beam is focused on a tilted workplate that rotates during the milling operation. A neutralization filament prevents the buildup of positive charge on the workplate.

Material Etch Rate (A°/min)
Gold (Au) 1000
Copper (Cu) 700
Az-1350 (resist) 200
Nichrome (NiCr) 170
Alumina (Al2O3) 90

The challenge that Ion Beam Milling has addressed and solved is that of thicker metallizations encountered in the thin and thick film hybrid industry where metal thickness up to 10 microns (400uin) are required for low DCR or low frequency skin depth concerns.

Typical values of etch rates are:

Production Method: Dry Milling (4 to 5 um metallization)
Post-Process Yields: Exceeding 90 percent
Circuit-to-Circuit Repeatability: 100 percent
Milling Performance: Anisotropic with no undercutting or pattern change
Available Feature Size: 0.2 um (0.000008 in.)
Other Advantages: Reduced inspection, rework, and final test time due to excellent repeatability.

JSiTS Inc.

Tel)031-479-4211~2   Fax)031-479-4213

  www.JSiTS.com www.4pointprobe.com

E-mail; JSi@JSiTS.com